document number: 93281 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 05-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor/thyristor (super magn-a-pak power modules), 570 a VSKT570-18PBF vishay semiconductors features ? high current capability ? high surge capability ? industrial standard package ? 3000 v rms isolating voltage with non-toxic substrate ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? motor starters ? dc motor controls - ac motor controls ? uninterruptable power supplies electrical specifications product summary i t(av) 570 a super magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) t c = 74 c 570 a i t(rms) t c = 74 c 895 i tsm 50 hz 17 800 60 hz 18 700 i 2 t 50 hz 1591 ka 2 s 60 hz 1452 i 2 ? t 15 910 ka 2 ? s v rrm 1800 v t stg range - 40 to 135 c t j range - 40 to 135 voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = t j maximum ma VSKT570-18PBF 18 1800 1900 120
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93281 2 revision: 05-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VSKT570-18PBF vishay semiconductors thyristor/thyristor (super magn-a-pak power modules), 570 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 570 a 74 c maximum rms on-state current i t(rms) 180 conduction, half sine wave at t c = 74 c 895 a maximum peak, one-cycle, non-repetitive on-state surge current i tsm, i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 17.8 ka t = 8.3 ms 18.7 t = 10 ms 100 % v rrm reapplied 15.0 t = 8.3 ms 15.7 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1591 ka 2 s t = 8.3 ms 1452 t = 10 ms 100 % v rrm reapplied 1125 t = 8.3 ms 1027 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.864 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.97 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.411 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.362 maximum on-state voltage drop v tm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.50 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 500 ma maximum latching current i l 1000 switching parameter symbol test co nditions values units maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, v drm applied 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 750 a; t j = t j maximum, di/dt = - 60 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to v d = 80 % v drm 1000 v/s rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 120 ma
document number: 93281 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 05-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VSKT570-18PBF thyristor/thyristor (super magn-a-pak power modules), 570 a vishay semiconductors note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum peak average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current +i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positive gate voltage +v gm 20 v maximum peak negative gate voltage -v gm 5.0 maximum dc gate current required to trigger i gt t j = 25 c, v ak 12 v 200 ma dc gate voltage required to trigger v gt 3.0 v dc gate current not to trigger i gd t j = t j maximum 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 135 c maximum storage temperature range t stg - 40 to 135 maximum thermal resistance, junction to case per junction r thjc dc operation 0.065 k/w maximum thermal resistance, case to heatsink r thc-hs 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6-8 nm busbar to smap 12-15 approximate weight 1500 g case style see dimensions (link at the end of datasheet) super magn-a-pak ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = t j maximum k/w 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93281 4 revision: 05-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VSKT570-18PBF vishay semiconductors thyristor/thyristor (super magn-a-pak power modules), 570 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current maximum allowable case temperature (c) average on-state current (a) 200 300 600 700 0 140 130 120 110 100 90 8 0 70 60 50 1 8 0 120 90 60 30 cond u ction angle ? 100 400 500 v skt570... series r thjc = 0.065 k/ w maximum allowable case temperature (c) average on-state current (a) 200 300 8 00 900 0 140 130 120 110 100 90 8 0 70 60 50 100 400 600 1 8 0 120 90 60 30 v skt570... series r thjc = 0.065 k/ w ? cond u ction period 700 500 dc maximum average on-state power loss (w) average on-state current (a) 100 200 300 400 500 600 0 1000 700 400 100 8 00 500 200 900 600 300 0 1 8 0 120 90 60 30 rms limit cond u ction angle ? v skt570... series t j = 135 c maximum average on-state power loss (w) average on-state current (a) 100 200 300 400 600 900 0 1200 400 8 00 200 600 0 1 8 0 120 90 60 30 rms limit v skt570... series t j = 135 c 1000 500 700 8 00 dc cond u ction period ? peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 16 000 15 000 14 000 13 000 12 000 11 000 10 000 9000 8 000 7000 v skt570... series per j u nction at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial t j = 135 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 18 000 6000 8000 10 000 12 000 14 000 16 000 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. initial t j = 135 c no voltage reapplied rated v rrm reapplied v skt570... series per j u nction
document number: 93281 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 05-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VSKT570-18PBF thyristor/thyristor (super magn-a-pak power modules), 570 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state voltage drop characteristics fig. 9 - thermal impedance z thjc characteristics fig. 10 - gate characteristics maximum total on-state power loss (w) total rms output current (a) 100 200 300 400 500 600 900 0 900 600 300 200 100 0 v skt570... series per mod u le t j = 135 c ? ? cond u ction angle 1 8 0 120 90 60 30 700 8 00 700 8 00 500 400 maximum total on-state power loss (w) maximum allowable ambient temperature (c) 20 40 60 8 0 100 120 0 900 8 00 700 500 500 400 300 200 100 0 r thsa = 0.07 k/ w 0.09 k/ w 0.2 k/ w 0.12 k/ w 0.3 k/ w 0.4 k/ w 0.5 k/ w 0.6 k/ w instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) 1.0 1.5 2.0 5.0 0.5 10 000 1000 100 2.5 3.0 3.5 4.0 4.5 v skt570... series per j u nction 0.001 0.01 0.1 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 100 s teady s tate value r thjc = 0.065 k/w (dc operation) v skt570... series per j u nction 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 1000 v gd i gd t j = 40 c t j = 25 c t j = 130 c ( b ) (a) fre qu ency limited b y p g(a v ) (1) (2) (3) (4) rectang u lar gate p u lse a) recommended load line for rated di/dt: 20 v , 10 ; t r 1 s b ) recommended load line for 30 % rated di/dt: 10 v , 10 t r 1 s (1) p gm = 10 w , t p = 4 ms (2) p gm = 20 w , t p = 2 ms (3) p gm = 40 w , t p = 1 ms (4) p gm = 60 w , t p = 0.66 ms v sk.570... series
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93281 6 revision: 05-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 VSKT570-18PBF vishay semiconductors thyristor/thyristor (super magn-a-pak power modules), 570 a ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95283 1 - module type 2 - circuit configuration (see below) 3 - current rating 4 - voltage code x 100 = v rrm 5 - lead (pb)-free device code 5 1 3 2 4 vsk t 570 - 18 pbf vskt + 6 (g2) - 5 (g1) ~ 1 2 3 7 (k2) 4 (k1)
document number: 95283 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 20-mar-08 1 super magn-a-pak thyristor/diode outline dimensions vishay semiconductors dimensions in millimeters (inches) 52 (2.05) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 20.1 (0.78) 36.4 (1.14) 4.5 (0.20) 54 6 5, 6 = gate 4, 7 = cathode 7 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1
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